creat by art - low power loss, high efficiency - ideal for automated placement - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 0.99 0.87 1.23 1.10 dv/dt v/ s r jc o c/w t j o c t stg o c document number: d1307008 version: j13 - 55 to +150 0.1 15 10 5 a 0.65 v 0.85 a 150 symbol mbrs 20100 ct unit mbrs 20150 ct mbrs 2050 ct case: to-263ab (d 2 pak) mbrs 2035 ct mbrs 2060 ct mbrs 2090 ct polarity: as marked maximum ratings and electrical characteristics (t a =25 unless otherwise noted) mbrs 2045 ct parameter weight: 1.37 g (approximately) MBRS2035CT thru mbrs20150ct dual common cathode schottk y rectifier taiwan semiconductor mechanical data - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - moisture sensitivity level: level 1, per j-std-020 to-263ab (d 2 pak) features note 2: pulse test with pw=300 s, 1% duty cycle operating junction temperature range storage temperature range ma maximum reverse current @ rated vr t j =25 t j =125 i frm 20 - 55 to +150 note 1: tp = 2.0 s, 1.0khz voltage rate of change (rated v r ) 0.75 maximum average forward rectified current 20 peak repetitive forward current (rated vr, square wave, 20khz) peak repetitive reverse surge current (note 1) 1 0.5 0.80 0.85 maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load 0.57 0.70 maximum instantaneous forward voltage (note 2) i f =10a, t j =25 i f =10a, t j =125 i f =20a, t j =25 i f =20a, t j =125 i fsm v f 0.84 typical thermal resistance i r 10000 0.72 0.85 0.95 0.95 1.5 2
part no. part no. mbrs2060ct mbrs2060ct mbrs2060ct (ta=25 unless otherwise noted) document number: d1307008 version: j13 ratings and characteristics curves MBRS2035CT thru mbrs20150ct taiwan semiconductor mbrs2060ct rng rn g green compound mbrs2060cthrn h rn aec-q101 qualified preferred p/n aec-q101 qualified packing code green compound code description mbrs2060ct rn rn 50 / tube note 1: "xx" defines voltage from 35v (MBRS2035CT) to 150v (mbrs20150ct) example rn suffix "g" d 2 pak 800 / 13" paper reel c0 d 2 pak ordering information aec-q101 qualified packing code green compound code package packing mbrs20xxct (note 1) prefix "h" 0 5 10 15 20 25 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload 0 25 50 75 100 125 150 1 10 100 peak forward surge c urrent (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse a current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=75 tj=125 tj=25 MBRS2035CT-2045ct mbrs2050ct-20150ct 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward a current (a) forward voltage (v) fig. 3 typical forward characteristics per leg tj=125 pulse width=300 s 1% duty cycle tj=25 MBRS2035CT-2045ct mbrs2050ct-2060ct mbrs2090ct-20150ct
min max min max a - 10.5 - 0.413 b 14.60 15.88 0.575 0.625 c 2.41 2.67 0.095 0.105 d 0.68 0.94 0.027 0.037 e 2.29 2.79 0.090 0.110 f 4.44 4.70 0.175 0.185 g 1.14 1.40 0.045 0.055 h 1.14 1.40 0.045 0.055 i 8.25 9.25 0.325 0.364 j 0.36 0.53 0.014 0.021 k 2.03 2.79 0.080 0.110 p/n = specific device code g = green compound yww = date code f = factory code document number: d1307008 version: j13 g marking diagram unit (mm) 10.8 8.3 1.1 3.5 16.9 9.5 2.5 symbol c d e a b f suggested pad layout MBRS2035CT thru mbrs20150ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 0.374 0.098 unit (inch) 0.425 0.327 0.043 0.138 0.665 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg MBRS2035CT-2045ct mbrs2050ct-20150ct f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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